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ELECTRO-OPTICAL PROPERTIES OF CUGA07IN03SE2/ZNSE HETEROJUNCTIONSEURET D; VIGIL O; LECCABUE F et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 2; PP. 661-666; ABS. FRE; BIBL. 11 REF.Article

BAND STRUCTURE CALCULATION OF ELECTRONIC PROPERTIES IN CUIN1-XGAXSE2CHIZHIKOV VI; PANYUTIN VL.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 104; NO 2; PP. 435-440; ABS. FRE; BIBL. 15 REF.Article

Emission line intensities in an r.f. sputtering glow discharge systemHERNANDEZ-ROJAS, J. L; LUCIA, M. L; SANTAMARIA, J et al.Thin solid films. 1993, Vol 228, Num 1-2, pp 133-136, issn 0040-6090Conference Paper

Effect of the ITO substrate on the growth of Cu(In,Ga)Se2, CuGa3Se5, CuGa5Se8 and CuIn3Se5 thin films by flash evaporationFRIEDRICH, E. J; TRIGO, J. F; RAMIRO, J et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 8, issn 0022-3727, 085401.1-085401.9Article

Novel in situ resistance measurement for the investigation of CIGS growth in a selenization processWEI LIU; TIAN, Jian-Guo; LI, Zu-Bin et al.Semiconductor science and technology. 2009, Vol 24, Num 3, issn 0268-1242, 035019.1-035019.4Article

Photosensitivity of In-p-CuInxGa1-xSe2 thin film structuresGREMENOK, V. F; ZARETSKAYA, E. P; BODNAR, I. V et al.Thin solid films. 1993, Vol 232, Num 1, pp 139-141, issn 0040-6090Article

ps-laser scribing of CIGS films at different wavelengthsGECYS, P; RACIUKAITIS, G; EHRHARDT, M et al.Applied physics. A, Materials science & processing (Print). 2010, Vol 101, Num 2, pp 373-378, issn 0947-8396, 6 p.Article

Preparation and Characterization of Cu(In,Ga)Se2 Thin Films Derived by Frequency Magnetron SputteringHUANG, Y. W; WENXIU QUE; ZHANG, J et al.Ferroelectrics (Print). 2010, Vol 402, pp 110-117, issn 0015-0193, 8 p.Conference Paper

Electron spin resonance study of CuGaxIn1-xSe2 chalcopyritic semiconductorsRAI, R; GUPTA, S. K; SURI, D. K et al.Physica status solidi. B. Basic research. 1984, Vol 124, Num 2, pp K167-K170, issn 0370-1972Article

Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation processWANG, H; ZHANG, Y; KOU, X. L et al.Semiconductor science and technology. 2010, Vol 25, Num 5, issn 0268-1242, 055007.1-055007.6Article

Thermodynamic study of equilibrium in the CuGaxIn1-xse2-I2 systemSUGIYAMA, K; MORI, K; TAJIMA, M et al.Journal of crystal growth. 1992, Vol 118, Num 1-2, pp 41-48, issn 0022-0248Article

Se activity and its effect on Cu(In,Ga)Se2 photovoltaic thin filmsCONTRERAS, Miguel A; REPINS, Ingrid; METZGER, Wyatt K et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 5, pp 1042-1048, issn 1862-6300, 7 p.Conference Paper

Thin film solar cells based on the chalcopyrite semiconductors Cu(Ga,In)Se2. Overview of the joint projectSCHOCK, H. W.European Communities Contractors. Meeting. 1. 1987, pp 119-124Conference Paper

THERMAL EXPANSION OF CUGA0.5IN0.5SE2KISTAIAH P; MURTHY KS; RAO KVK et al.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 7; PP. 1265-1272; BIBL. 24 REF.Article

The effect of NaF precursors on low temperature growth of CIGS thin film solar cells on polyimide substratesCABALLERO, Raquel; KAUFMANN, Christian A; EISENBARTH, Tobias et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 5, pp 1049-1053, issn 1862-6300, 5 p.Conference Paper

X-ray study of CuGaxIn1-xSe2 solid solutionsSURI, D. K; NAGPAL, K. C; CHADHA, G. K et al.Journal of applied crystallography. 1989, Vol 22, pp 578-583, issn 0021-8898, 6Article

Real-time analysis of the microstructural evolution www.pss-rapid.com and optical properties of Cu(In,Ga)Se2 thin films as a function of Cu content : SOLAR CELLSRANJAN, Vikash; COLLINS, R. W; MARSILLAC, Sylvain et al.Physica status solidi. Rapid research letters (Print). 2012, Vol 6, Num 1, pp 10-12, issn 1862-6254, 3 p.Article

CIGS solar cell with CdS buffer layer deposited by ammonia-free processKOMAKI, H; YAMADA, A; SAKURAI, K et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 5, pp 1072-1075, issn 1862-6300, 4 p.Conference Paper

Thermodynamic analysis of the CuGaSe2-In systemSUGIYAMA, K.Journal of crystal growth. 1988, Vol 89, Num 4, pp 579-584, issn 0022-0248Article

Crystal growth and diffusion in Cu(In,Ga)Se2 chalcopyrite thin filmsWALTER, T; SCHOCK, H. W.Thin solid films. 1993, Vol 224, Num 1, pp 74-81, issn 0040-6090Article

Optical properties and band structure of the CuIn0.6Ga0.4Se2 alloyTINOCO, T; QUINTERO, M; CHARLEBOIS, A et al.Materials letters (General ed.). 1992, Vol 14, Num 1, pp 17-20, issn 0167-577XArticle

The correlation between local defect absorbance and quasi-Fermi level splitting in CuInS2 from photoluminescenceHEIDEMANN, F; BRÜGGEMANN, R; BAUER, G. H et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 14, issn 0022-3727, 145103.1-145103.4Article

Degradation analysis of thin film photovoltaic modulesRADUE, C; VAN DYK, E. E.Physica. B, Condensed matter. 2009, Vol 404, Num 22, pp 4449-4451, issn 0921-4526, 3 p.Conference Paper

Effects of Mo back contact thickness on the properties of CIGS solar cellsKAMIKAWA-SHIMIZU, Yukiko; SHIMADA, Shuuhei; MAEJIMA, Keigou et al.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 5, pp 1063-1066, issn 1862-6300, 4 p.Conference Paper

Photovoltaic performance of polycrystaline thin film n-CdS/P-CuGa0.75In0.25Se2 heterojunctionsAPARNA, Y; REDDY, P. S; SRINIVASULU NAIDU, B et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1992, Vol 14, Num 1, pp 71-74Article

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